Study of Ge x Si1−x /Si superlattices by ellipsometry

Multiple-angle-of-incidence (MAI) ellipsometry is used to study Ge_xSi_1–x/Si superlattices fabricated by a RRH/VLP-CVD system. Based on the fundamental ellipsometric equations and properties of semiconductor superlattices (SL), various parameters of SL structure, such as the sublayer thickness, complex refractive index and composition, are achieved precisely and simultaneously. The results obtained from ellipsometry are well consistent with those from growth conditions and other characterization techniques.