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Facile Hydrazine‐Hydrothermal Syntheses and Characterizations of Two Quaternary Thioarsenates(III): Two‐Dimensional SrAg4As2S6⋅2 H2O and One‐Dimensional BaAgAsS3
Authors:Dr. Dongming Yan  Chang Liu  Prof. Dr. Wenxiang Chai  Xuerong Zheng  Luodong Zhang  Dr. Mingjia Zhi  Dr. Chunmei Zhou  Prof. Dr. Qichun Zhang  Prof. Dr. Yi Liu
Affiliation:1. School of Civil and Architectural Engineering, Zhejiang University, Hangzhou, China;2. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China;3. College of Materials Science and Engineering, China Jiliang University, Hangzhou, China;4. School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore;5. Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
Abstract:Two new quaternary thioarsenates(III), SrAg4As2S6?2 H2O ( 1 ) and BaAgAsS3 ( 2 ), have been prepared through a hydrazine‐hydrothermal method at low temperature. Compound 1 possesses a two‐dimensional (2D) layer network, while compound 2 features a one‐dimensional (1D) column structure. The detailed structure analysis indicates that Sr2+ and Ba2+ cations have different directing effects on the structures of thioarsenates(III). Both experimental and theoretical studies demonstrate that compounds 1 and 2 are narrow‐gap semiconductors. Our success in synthesizing these two quaternary thioarsenates(III) proves that the hydrazine‐hydrothermal technique is a powerful yet facile synthetic method for exploring new complex chalcogenides with diverse crystal structures and interesting physical properties.
Keywords:column structure  hydrazine-hydrothermal  layer networks  semiconductors  thioarsenates(III)
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