High Performance Nonvolatile Transistor Memories Utilizing Functional Polyimide‐Based Supramolecular Electrets

We report pentacene‐based organic field‐effect transistor memory devices utilizing supramolecular electrets, consisting of a polyimide, PI(6FOH‐ODPA), containing hydroxyl groups for hydrogen bonding with amine functionalized aromatic rings (AM) of 1‐aniline (AM1), 2‐naphthylamine (AM2), 2‐aminoanthracene (AM3), and 1‐aminopyrene (AM4). The effect of the phenyl ring size and composition of AM1–AM4 on the hole‐trapping capability of the fabricated devices was investigated systematically. Under an operating voltage under ±40 V, the prepared devices using the electrets of 100 % AM1–AM4/PI ratios exhibited a memory window of 0, 8.59, 25.97, and 29.95 V, respectively, suggesting that the hole‐trapping capability increased with enhancing phenyl ring size. The memory window was enhanced as the amount of AM in PI increased. Furthermore, the devices showed a long charge‐retention time of 10⁴ s with an ON/OFF current ratio of around 10³–10⁴ and multiple switching stability over 100 cycles. This study demonstrated that the electrical characteristics of the OFET memory devices could be manipulated through the chemical compositions of the supramolecular electrets.