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Ternary Flexible Electro‐resistive Memory Device based on Small Molecules
Authors:Dr. Qi‐jian Zhang  Prof. Jing‐hui He  Hao Zhuang  Prof. Hua Li  Prof. Na‐jun Li  Prof. Qing‐feng Xu  Dr. Dong‐yun Chen  Prof. Jian‐mei Lu
Affiliation:1. College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, P. R. China;2. (+86)?512‐65880367
Abstract:Flexible memory devices have continued to attract more attention due to the increasing requirement for miniaturization, flexibility, and portability for further electronic applications. However, all reported flexible memory devices have binary memory characteristics, which cannot meet the demand of ever‐growing information explosion. Organic resistive switching random access memory (RRAM) has plenty of advantages such as simple structure, facile processing, low power consumption, high packaging density, as well as the ability to store multiple states per bit (multilevel). In this study, we report a small molecule‐based flexible ternary memory device for the first time. The flexible device maintains its ternary memory behavior under different bending conditions and within 500 bending cycles. The length of the alkyl chains in the molecular backbone play a significant role in molecular stacking, thus guaranteeing satisfactory memory and mechanical properties.
Keywords:memory devices  molecular stacking  side chains  ternary memory
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