| ��Ʒ�¶ȶ�Ar+��SiC��Ʒ�����Ӱ��ķ��Ӷ���ѧģ�� |
| |
| 引用本文： | 孙伟中,赵成利,刘华敏,张浚源,吕晓丹,潘宇东,苟富均. ��Ʒ�¶ȶ�Ar+��SiC��Ʒ�����Ӱ��ķ��Ӷ���ѧģ��[J]. 核聚变与等离子体物理, 2010, 30(4): 317-322 |
| |
| 作者姓名： | 孙伟中 赵成利 刘华敏 张浚源 吕晓丹 潘宇东 苟富均 |
| |
| 作者单位： | (1. ?????????????????о???????????????????????????????????? 610064?? 2. ???????????????????????????о????????? 550025?? 3. ?????????????о??????? 610041??4. ?????????????????????????? 2300) |
| |
| 基金项目： | 国际热核聚变实验堆(ITER)计划专项资助项目，贵州省优秀青年科技人才培养计划资助项目 |
| |
| 摘 要： | 采用分子动力学模拟方法研究了样品温度对Ar+与SiC样品表面相互作用的影响。由模拟结果可知，SiC样品中Si原子的溅射产额随着温度的升高而增加，而温度对C原子的溅射产额影响不大。在相同温度下，Si原子的溅射产额要高于C原子的溅射产额。溅射出来的Si原子和C原子主要来源于样品的表层区域，样品中的Si和C原子密度、键密度及它们的成键方式也发生了较大的变化。初始样品中Si和C原子的密度是均匀的，而被轰击过后的样品表面Si原子的密度要高于C原子，而样品中部C原子的密度要高于Si原子。初始样品都是Si-C键，成键方式为Si-Csp3；被轰击过后又有Si-Si和C-C键，成键方式也发生了变化，还有Si-Csp1和Si-Csp2。
|
| 关 键 词： | 分子动力学 SiC 溅射 密度 |
| 收稿时间： | 2010-05-13 |
| 修稿时间： | 2010-09-14 |
Molecular dynamics simulation of the effects of the samples' temperature on Ar+ interactions with SiC surface |
| |
| SUN Wei-zhong,ZHAO Cheng-li,LIU Hua-min,ZHANG Jun-yuan,L Xiao-dan,PAN Yu-dong,GOU Fu-jun. Molecular dynamics simulation of the effects of the samples' temperature on Ar+ interactions with SiC surface[J]. Nuclear Fusion and Plasma Physics, 2010, 30(4): 317-322 |
| |
| Authors: | SUN Wei-zhong ZHAO Cheng-li LIU Hua-min ZHANG Jun-yuan L Xiao-dan PAN Yu-dong GOU Fu-jun |
| |
| Affiliation: | (1. Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064; 2. Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025; 3. Southwestern Institute of Physics, Chengdu 610041; 4. FOM Institute for Plasma Physics, 3439 MN Nieuwegein, Netherlands) |
| |
| Abstract: | Molecular dynamics simulations were performed to investigate the effects of surface temperature on Ar+ interactions with the SiC surface. The simulation results show that the number of Si atoms removed increases with increasing surface temperature, while the number of C atoms removed slightly changes. The sputtering yield of Si atoms is greater than that of C atoms. It is found that most of Si and C atoms removed come from the surface region. After modified by Ar+ ions, a Si-rich amorphous layer is formed. |
| |
| Keywords: | Molecular dynamics SiC Sputtering Density |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《核聚变与等离子体物理》浏览原始摘要信息 |
|
点击此处可从《核聚变与等离子体物理》下载免费的PDF全文 |
