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Topology of PbSnTe:In Layers Versus Indium Concentration |
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| Authors: | Ishchenko D. V. Akimov A. N. Akhundov I. O. Golyashov V. A. Klimov A. E. Loginov A. B. Loginov B. A. Pashchin N. S. Tarasov A. S. Fedosenko E. V. Sherstyakova V. N. |
| Affiliation: | 1.Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ;2.Novosibirsk State University, 630090, Novosibirsk, Russia ;3.Novosibirsk State Technical University, 630073, Novosibirsk, Russia ;4.Moscow State University, 119991, Moscow, Russia ;5.National Research University of Electronic Engineering, 124498, Zelenograd, Moscow, Russia ; |
| Abstract: | Technical Physics - The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb1 – xSnxTe:In) has been examined using atomic force microscopy.... |
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