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Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer |
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| Authors: | Gusev A. S. Kargin N. I. Ryndya S. M. Safaraliev G. K. Siglovaya N. V. Smirnova M. O. Solomatin I. O. Sultanov A. O. Timofeev A. A. |
| Affiliation: | 1.National Research Nuclear University “Moscow Engineering Physics Institute”, 115409, Moscow, Russia ; |
| Abstract: | Technical Physics - The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The... |
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