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High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures |
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| Authors: | Zhuravlev K. S. Gilinsky A. M. Chistokhin I. B. Valisheva N. A. Dmitriev D. V. Toropov A. I. Aksenov M. S. Chizh A. L. Mikitchuk K. B. |
| Affiliation: | 1.Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ;2.Novosibirsk State University, 630090, Novosibirsk, Russia ;3.State Research and Production Association “Optics, Optoelectronics, and Laser Technology,” National Academy of Sciences of Belarus, 220090, Minsk, Belarus ; |
| Abstract: | Technical Physics - The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are... |
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