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Studying the Optical and Structural Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Elements of the Fifth Group
Authors:Gladyshev  A. G.  Babichev  A.V.  Andryushkin  V. V.  Denisov  D. V.  Nevedomskii  V. N.  Kolodeznyi  E. S.  Novikov  I. I.  Karachinsky  L. Ya.  Egorov  A. Yu.
Affiliation:1.ITMO University, 197101, St. Petersburg, Russia
;2.St. Petersburg State Electrotechnical University “LETI,”, 197376, St. Petersburg, Russia
;3.Joint Research Center “Materials Science and Characterization in Advanced Technology,” Ioffe Institute, 194021, St. Petersburg, Russia
;4.Connector Optics LLC, 194292, St. Petersburg, Russia
;
Abstract:Technical Physics - A new method for the formation of three-dimensional quantum-dimensional InGaP(As) islands is proposed, which consists in replacing phosphorus with arsenic in an InGaP layer...
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