Formation of SiC Mesastructures with Gently Sloping Sidewalls by Dry Selective Etching through a Photoresist Mask |
| |
| Authors: | Lebedeva N. M. Samsonova T. P. Il’inskaya N. D. Troshkov S. I. Ivanov P. A. |
| |
| Affiliation: | 1.Ioffe Institute, 194021, St. Petersburg, Russia
; |
| |
| Abstract: | Technical Physics - We have demonstrated that SiC mesastructures with gently sloping sidewalls form with the help of selective reactive ion etching (RIE) of silicon carbide through a photoresist... |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
