Switching phenomena in CdIn2S4 thin films |
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Authors: | Y Seki S Endo T Irie |
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Institution: | (1) Department of Electrical Engineering, Faculty of Science and Technology, Science University of Tokyo, Noda, 278 Chiba, Japan;(2) Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo, Shinjuku-ku, 162 Tokyo, Japan;(3) Present address: Fuji Electric Corporate Research and Development, Ltd., Yokosuka, 240-01 Kanagawa, Japan |
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Abstract: | Summary Two kinds of switching phenomena in CdIn2S4 polycrystalline and amorphous thin films which were prepared by the vacuum evaporation method and the d.c. sputtering method,
respectively, were studied. One is the so-called memory switching phenomenon arising from the low resistive filament path.
Another is a characteristic switching phenomenon in which the resistivity abruptly changes whenever the ambient temperature
reaches a critical value. The switching time is fast and about 100 ns. This switching phenomenon is related to the native
defects in the CdIn2S4 lattice, because they can be observed in the polycrystalline as well as in the amorphous thin films.
Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16,
1982. |
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Keywords: | Electronic properties of thin films |
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