Extended defects in shallow implants |
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Authors: | A Claverie B Colombeau B de Mauduit C Bonafos X Hebras G Ben Assayag F Cristiano |
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Institution: | (1) Ion Implantation Group CNRS Toulouse, CEMES/CNRS, BP 4347, 31055 Toulouse Cedex, France, FR;(2) Ion Implantation Group CNRS Toulouse, LAAS/CNRS, 7 Ave. Colonel Roche, 31055 Toulouse Cedex, France, FR |
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Abstract: | Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion.
The article reviews the structure and energetics of the most often found extended defects and describes the mechanisms by
which all these defects grow in size and transform during annealing. Defects grow by interchanging the Si atoms they are composed
of and thus maintain large supersaturations of free Si interstitials in the region. A model has been developped to describe
such an evolution in presence of a free surface. It is shown that after low energy implantation, the surface of the wafer
may recombine large amounts of these free Si interstitials, driving defects into dissolution before transformation into more
stable forms.
Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003
RID="*"
ID="*"Corresponding author. Fax: +33-56/2257-999, E-mail: claverie@cemes.fr |
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Keywords: | PACS: 85 40 Ry 61 72 Ff 61 72 Tt |
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