n-type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups |
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Authors: | Ando Shinji Murakami Ryo Nishida Jun-ichi Tada Hirokazu Inoue Youji Tokito Shizuo Yamashita Yoshiro |
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Affiliation: | Department of Electronic Chemistry, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8502, Japan. |
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Abstract: | Novel thiazole oligomers and thiazole/thiophene co-oligomers with trifluoromethylphenyl groups were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. A 5,5'-bithiazole with trifluoromethylphenyl groups forms a closely packed two-dimensional columnar structure leading to a high performance n-type FET. The electron mobility was enhanced to 1.83 cm2/Vs on the OTS-treated substrate. |
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