Layer-by-layer analysis of A4B6 thin-film heterostructures using inductively coupled plasma atomic fluorescence spectrometry (ICP-AFS)

The technique of layer-by-layer analysis of semiconductive A₄B₆ heterostructures using electrochemical etching and inductively coupled plasma atomic fluorescence spectrometry (ICP AFS) is developed. The Norr etching solution and electrochemical oxidation with subsequent dissolution of oxidized layers in acid were used to remove layers of 0.5 to several microns thickness. Pb_1?xEu_xTe/PbTe and Pb_1?xEu_xSe/PbSe heterostructures were analyzed. The Eu content in removed layers was determined by ICP-AFS. The data on Eu depth profiles were used for the evaluation of the Eu diffusion coefficient in this heterostructures to predict the changes of properties along the depth of the structure. The technique can be applied to the analysis of semiconductive heterostructures with different admixtures.