Surfactant-mediated molecular beam epitaxy of high-quality (111)B-GaAs |
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Authors: | M Ilg D Eißler C Lange K Ploog |
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Institution: | (1) Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, W-7000 Stuttgart 80, Germany;(2) Present address: Paul-Drude-Institut für Halbleiterelektronik, O-1086 Berlin, Germany |
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Abstract: | We present a novel approach to the molecular beam epitaxy of 111]-oriented GaAs. Surface-segregating In employed as an isoelectronic surfactant allows us to achieve mirror-like (111) GaAs surfaces within a wide range of growth conditions. Scanning electron and atomic force microscopy confirm the excellent morphology of the resulting samples. High-resolution X-ray diffraction shows the incorporation of In into the films to be negligible. Finally, we demonstrate a 10 Å-In0.2Ga0.8As/300 Å-GaAs superlattice based on surfactant-grown GaAs with a photoluminescence linewidth as narrow as 4.2 meV. |
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Keywords: | 68 55 Bd 61 16 Di 61 10 Lx |
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