用内光发射瞬态电流温度谱测定a-Si:H的隙态密度分布

本文提出了一种新的研究a-Si:H隙态密度分布的方法——内光发射瞬态电流温度谱。利用这种方法,我们测量了辉光放电制备的a-Si:H材料的隙态密度分布。所得结果在结构上与通常的场效应法结果相似,但在数值上比场效应法结果约小一到两个数量级。关键词：

DETERMINATION OF THE GAP STATE DISTRIBUTION IN a-Si:H BY THE METHOD OF INTERNAL PHOTOEMISSION TRANSIENT CURRENT TEMPERATURE SPECTROSCOPY

In this paper, we present a new method of determination of the gap state distribution in a-Si :H—the internal photoemission transient current temperature spectroscopy(IPETCTS). By this method, we suceeded in determining the GDOS distribution N(E) in a GD a-Si:H film. The result agrees in shape with that obtain ed from the typical field effect measurement, while the magnitude of the gap state density.obtained from the IPBTCTS is smaller by one to two orders than that from field effect measurement.