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物理升华法生长ZnO晶体的研究
引用本文:刘洋,马剑平,刘富丽,臧源,刘艳涛.物理升华法生长ZnO晶体的研究[J].半导体学报,2014,35(3):033001-5.
作者姓名:刘洋  马剑平  刘富丽  臧源  刘艳涛
作者单位:School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China
基金项目:Project supported by the Special Scientific Research Plan Project of Shaanxi Provincial Education Department,China(No.08JK376)
摘    要:Zinc oxide(ZnO) has a wide band gap, high stability and a high thermal operating range that makes it a suitable material as a semiconductor for fabricating light emitting diodes(LEDs) and laser diodes, photodiodes, power diodes and other semiconductor devices. Recently, a new crystal growth for producing ZnO crystal boules was developed, which was physical vapor transport(PVT), at temperatures exceeding 1500 ?C under a certain system pressure. ZnO crystal wafers in sizes up to 50 mm in diameter were produced. The conditions of ZnO crystal growth, growth rate and the quality of ZnO crystal were analyzed. Results from crystal growth and material characterization are presented and discussed. Our research results suggest that the novel crystal growth technique is a viable production technique for producing ZnO crystals and substrates for semiconductor device applications.

关 键 词:晶体生长  气相传输  氧化锌  物理  ZnO晶体  半导体器件  工艺制造  激光二极管

Physical vapor transport crystal growth of ZnO
Liu Yang,Ma Jianping,Liu Fuli,Zang Yuan and Liu Yantao.Physical vapor transport crystal growth of ZnO[J].Chinese Journal of Semiconductors,2014,35(3):033001-5.
Authors:Liu Yang  Ma Jianping  Liu Fuli  Zang Yuan and Liu Yantao
Institution:School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China;School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China;School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China;School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China;School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China
Abstract:ZnO crystal boules physical vapor transport(PVT) sublimation impurity analysis growth rate
Keywords:ZnO  crystal boules  physical vapor transport (PVT)  sublimation  impurity analysis  growth rate
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