Indium oxide nanostructures |
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| Authors: | G. Cheng E. Stern S. Guthrie M.A. Reed R. Klie Y. Hao G. Meng L. Zhang |
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| Affiliation: | (1) Departments of Electrical Engineering, Yale University, P.O. Box 208284, New Haven, CT 06520, USA;(2) Departments of Physics, Yale University, P.O. Box 208284, New Haven, CT 06520, USA;(3) Departments of Biomedical Engineering, Yale University, P.O. Box 208284, New Haven, CT 06520, USA;(4) Departments of Applied Physics, Yale University, P.O. Box 208284, New Haven, CT 06520, USA;(5) Center for Functional Nanomaterials, Brookhaven National Laboratory, P.O. Box 5000, Upton, NY 11973, USA;(6) Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei, 230031, P.R. China |
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| Abstract: | In this report we review the growth of indium oxide (In2O3) nanostructures, including octahedral nanocrystals (NCs), nanobelts (NBs), nanosheets (NSs), and nanowires (NWs), by hot-wall chemical vapor deposition (HW-CVD). This system is highly controllable, allowing the user to easily access different growth regimes – each corresponding to the growth of a different nanostructure – by changing growth variables of the HW-CVD system. Hot-wall CVD produces crystalline nanostructures; here we present a survey of microstructural characterizations of the four types of In2O3 nanostructures using transmission- and scanning-electron microscopy. Interestingly, the In2O3 nanostructures have different preferred growth directions: NCs have (111) faces, NBs are predominantly (200), and NWs are predominantly (110). We end the review by discussing the current shortcomings of HW-CVD growth of In2O3 nanostructures. PACS 61.46.-w; 61.82.Rx; 73.31.Hb; 81.02.-b |
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