|
|||||
|
|
Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode |
|
| Affiliation: | Chen Feng-Ping,Zhang Yu-Ming,Zhang Yi-Men,Tang XiaoYan,Wang Yue-Hu,Chen Wen-Ha(a) School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University, Xi＇an 710071, China ; b) School of Technical Physics, Xidian University, Xi＇an 710071, China) |
| Abstract: | |
| Keywords: | 4H-SiC junction barrier Schottky offset field plate electrical characteristics |
| 本文献已被 维普 等数据库收录！ | |