The effects of ion implantation on the anodic oxidation of silicon

The effects of H⁺, C⁺, N⁺, Ne⁺, Al⁺, P⁺, Cl⁺, Ar⁺, Ga⁺, As⁺, Kr⁺, Sb⁺, Xe⁺, Au⁺ and Tl⁺ ion implantation on the anodic oxidation of Si have been investigated as a function of dose and energy, in the as-implanted stage and after heat treatment at temperatures up to 1050°C. It is speculated that the location, in the formed oxide, of agglomerates containing the dopant, and the influence of these agglomerates on oxygen diffusion in SiO₂ and/or oxygen evaluation at the oxide/solution interface are factors which account for the enhancement/retardation of the anodic oxidation.