Electrophysical properties of zinc-sulfide films obtained by high-frequency magnetron sputtering |
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Authors: | P I Antonenko Sh M Abdrashitov P E Troyan |
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Institution: | (1) Tomsk Institute of Automated Control Systems and Radioelectronics, USSR |
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Abstract: | The structure and electrophysical properties of zinc-sulfide films obtained by high-frequency magnetron sputtering are investigated. It is shown that the electrical strength of the films is no less than 106 V·cnr–1, the width of the forbidden band is 3.2–3.3 eV, and the refractive index is 1.8. The films are tested as electroluminescent layers in thin-film electroluminescent emitters. Luminescence with a brightness of 150 cd/m2 is obtained.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 29–32, June, 1990.It remains to thank A. A. Miller for perfecting the electron-microscope investigations. |
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