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第一性原理研究Ag掺杂及缺陷共存对ZnO光催化性质的影响
引用本文:张海峰,王彬,程彩萍,伊思静.第一性原理研究Ag掺杂及缺陷共存对ZnO光催化性质的影响[J].人工晶体学报,2021,50(11):2027-2035.
作者姓名:张海峰  王彬  程彩萍  伊思静
作者单位:山西农业大学基础部,晋中 030801
基金项目:山西省高校科技创新基金(2020L0170);山西农业大学科技创新基金(2015YJ107);国家自然科学基金(22002077)
摘    要:运用第一性原理研究了Ag掺杂及缺陷共存对ZnO光电性质的影响。计算结果表明富O条件有利于Ag的掺杂,贫O条件不利于Ag的掺杂。Ag掺杂浓度较低时有利于模型的稳定,其在富O或贫O条件下都以AgZn为主要掺杂方式。当Ag掺杂浓度较高时,富O条件下以AgZn-AgZn为主要掺杂方式,贫O条件下AgZn-Agi是较为有利的掺杂方式。富O条件下Ag掺杂较难引入VZn和Oi共存缺陷。贫O条件下优先出现的模型为VO,VO在一定程度上会促进Ag的掺杂。Ag掺杂降低了ZnO的带隙宽度,掺杂浓度越大模型带隙宽度越窄。VZn、VO和Oi缺陷共存不同程度地增加了Ag掺杂模型的带隙宽度。Ag掺杂及VZn和Oi缺陷共存均使ZnO吸收边红移至可见光区,扩展了ZnO对太阳光的吸收范围,而AgZn-VO在可见光范围内依然是透明。在低能区紫外-可见光范围内,AgZn-AgZn表现出更高的光吸收率,但是相应形成能也高于AgZn。VZn的引入提高了AgZn-VZn和AgZn-AgZn-VZn对低能区紫外-可见光的吸收,VO的引入有利于ZnO表面吸附更多的O2进而产生更多的H2O2和·HO强氧化性物质,即VZn和VO缺陷共存都有利于ZnO光催化性能的提高。

关 键 词:ZnO  Ag掺杂  缺陷共存  第一性原理  光催化性质  光电性质  

First-Principles Study on the Effects of Ag Doping and Defect Coexistence on the Photocatalytic Properties of ZnO
ZHANG Haifeng,WANG Bin,CHENG Caiping,YI Sijing.First-Principles Study on the Effects of Ag Doping and Defect Coexistence on the Photocatalytic Properties of ZnO[J].Journal of Synthetic Crystals,2021,50(11):2027-2035.
Authors:ZHANG Haifeng  WANG Bin  CHENG Caiping  YI Sijing
Institution:Department of Basic, Shanxi Agricultural University, Jinzhong 030801, China
Abstract:The effects of Ag doping and defect coexistence on the photoelectric properties of ZnO were studied by first-principles method. The calculation results indicate that O-rich condition is beneficial to Ag doping, while O-poor condition has an inhibitory effect. When Ag doping concentration is lower, AgZn is dominant doping model under O-rich or O-poor conditions, and the model is more stable. When Ag doping concentration is higher, AgZn-AgZn is dominant doping model under O-rich condition, and that is AgZn-Agi under O-poor condition. Under O-rich condition, it is difficult to introduce the coexistence defect of VZn and Oi by Ag doping. VO is a preferred model under O-poor condition, and it can promote Ag doping to a certain extent. Ag doping reduces the band gap of ZnO. The higher of doping concentration is, the narrower of band gap will be. The defect coexistence of VZn, VO and Oi increase the band gap of Ag doped models. Ag doping and the defect coexistence of VZn, Oi all red shift the absorption edge of ZnO to the visible region, which expands the absorption range of ZnO to sunlight. AgZn-VO is transparent in the visible region. In the low energy region, AgZn-AgZn shows higher optical absorptivity, but the corresponding formation energy is also higher than that of AgZn. VZn improves the optical absorptivity of AgZn-VZn and AgZn-AgZn-VZn in the low energy region. VO is beneficial to the adsorption of O2 by ZnO and can produce more H2O2 and ·HO. The defect coexistence of VZn and VO both improve the photocatalytic performance of ZnO.
Keywords:ZnO  Ag doping  defect coexistence  first-principle  photocatalytic property  photoelectric property  
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