Epitaxial growth and transport properties of compressively-strained Ba2IrO4 films |
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| Institution: | 1.National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;2.Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;3.Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China |
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| Abstract: | Ba2IrO4 is a sister compound of the widely investigated Sr2IrO4 and has no IrO6 octahedral rotation nor net canted antiferromagnetic moment, thus it acts as a system more similar to the high-Tc cuprate. In this work, we synthesize the Ba2IrO4 epitaxial films by reactive molecular beam epitaxy and study their crystalline structure and transport properties under biaxial compressive strain. High resolution scanning transmission electron microscopy and x-ray diffraction confirm the high quality of films with partial strain relaxation. Under compressive epitaxial strain, the Ba2IrO4 exhibits the strain-driven enhancement of the conductivity, consistent with the band gap narrowing and the stronger hybridization of Ir-t2g and O-2p orbitals predicted in the first-principles calculations. |
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| Keywords: | molecular beam epitaxy iridate oxides epitaxial strain transport properties |
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