Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy |
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Institution: | 1.School of Microelectronics, University of Science and Technology of China, Hefei 230026, China;2.School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;3.Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China |
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Abstract: | AlN/GaN resonant tunneling diodes (RTDs) were grown separately on freestanding GaN (FS-GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA-MBE). Room temperature negative differential resistance (NDR) was obtained under forward bias for the RTDs grown on FS-GaN substrates, with the peak current densities (Jp) of 175-700 kA/cm2 and peak-to-valley current ratios (PVCRs) of 1.01-1.21. Two resonant peaks were also observed for some RTDs at room temperature. The effects of two types of substrates on epitaxy quality and device performance of GaN-based RTDs were firstly investigated systematically, showing that lower dislocation densities, flatter surface morphology, and steeper heterogeneous interfaces were the key factors to achieving NDR for RTDs. |
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Keywords: | resonant tunneling diodes negative differential resistance molecular beam epitaxy III-nitrides |
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