Observation of magnetoresistance in CrI3/graphene van der Waals heterostructures |
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| Institution: | 1.National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China;2.Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China |
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| Abstract: | Two-dimensional ferromagnetic van der Waals (2D vdW) heterostructures have opened new avenues for creating artificial materials with unprecedented electrical and optical functions beyond the reach of isolated 2D atomic layered materials, and for manipulating spin degree of freedom at the limit of few atomic layers, which empower next-generation spintronic and memory devices. However, to date, the electronic properties of 2D ferromagnetic heterostructures still remain elusive. Here, we report an unambiguous magnetoresistance behavior in CrI3/graphene heterostructures, with a maximum magnetoresistance ratio of 2.8%. The magnetoresistance increases with increasing magnetic field, which leads to decreasing carrier densities through Lorentz force, and decreases with the increase of the bias voltage. This work highlights the feasibilities of applying two-dimensional ferromagnetic vdW heterostructures in spintronic and memory devices. |
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| Keywords: | two-dimensional ferromagnetic van der Waals heterostructure magnetoresistance |
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