超宽禁带半导体β-Ga2O3相关研究进展

氧化镓(β-Ga₂O₃)是一种超宽禁带氧化物半导体材料,其相关研究起源于日本。21世纪初,日本东北大学利用浮区法获得了多晶向的高质量β-Ga₂O₃单晶晶圆,京都大学开展了β-Ga₂O₃薄膜外延研究并获得了高质量的同质外延片。在此基础上,日本信息通信研究机构于2012年构建了第一个β-Ga₂O₃金属半导体场效应晶体管(MESFET),证明了β-Ga₂O₃在功率器件领域拥有巨大潜能,开启了β-Ga₂O₃研发的新纪元。此后,国际上众多机构加入了β-Ga₂O₃单晶、外延、器件的研发潮流。随着研发工艺的进步,β-Ga₂O₃基功率器件的耐压上限一次次被刷新。本文梳理了β-Ga₂O₃单晶、外延、器件发展的时间线,汇总分析了β-Ga₂O₃功率器件的研究现状,指出存在的问题和可能的解决方案,并对其未来进行了展望,期望为以后的技术发展提供参考。

Research Progress of Ultra-Wide Bandgap Semiconductor β-Ga2O3

At the beginning of the 21st century, β-Ga₂O₃, an ultra-wide bandgap semiconductor, was researched initially in Japan. β-Ga₂O₃ wafers with different orientations were prepared by Tohoku University using floating zone technique. High-quality homoepitaxial wafers was obtained by Kyoto University which was engaged in β-Ga₂O₃ epitaxy research. Based on this substrate, the first Ga₂O₃-based MESFET device was successfully constructed by Japan National Institute of Information and Communications Technology in 2012. This work demonstrated the great potential of β-Ga₂O₃ in power devices and opened a new era of β-Ga₂O₃ research. Since then, β-Ga₂O₃ single crystals, epi-wafers and devices have attracted a lot of research institutions' attention. Recent years, with the technological progress, the upper limit of breakdown voltage of β-Ga₂O₃ power devices was repeatedly refreshed. The time line of the development of β-Ga₂O₃ single crystal, epi-wafers, devices and the research status of power devices are summarized and analyzed in this article. This paper points out the existing problems and possible solutions in the application of β-Ga₂O₃, and looks forward to its future development, and provides a reference for the future technological development of β-Ga₂O₃.