Oxygen vacancy control of electrical,optical, and magnetic properties of Fe0.05Ti0.95O2 epitaxial films |
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Institution: | College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, China |
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Abstract: | High-quality Fe-doped TiO2 films are epitaxially grown on MgF2 substrates by pulsed laser deposition. The x-ray diffraction and Raman spectra prove that they are of pure rutile phase. High-resolution transmission electron microscopy (TEM) further demonstrates that the epitaxial relationship between rutile-phased TiO2 and MgF2 substrates is 110 TiO22. The room temperature ferromagnetism is detected by alternative gradient magnetometer. By increasing the ambient oxygen pressure, magnetization shows that it decreases monotonically while absorption edge shows a red shift. The transport property measurement demonstrates a strong correlation between magnetization and carrier concentration. The influence of ambient oxygen pressure on magnetization can be well explained by a modified bound magnetization polarization model. |
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Keywords: | ferromagnetic materials semiconductors epitaxial films rutile TiO2 |
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