|
|||||
|
|
| GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers | |
| 作者姓名： | Yi Zhang(张一) Cheng-Ao Yang(杨成奥) Jin-Ming Shang(尚金铭) Yi-Hang Chen(陈益航) Tian-Fang Wang(王天放) Yu Zhang(张宇) Ying-Qiang Xu(徐应强) Bing Liu(刘冰) and Zhi-Chuan Niu(牛智川) |
| 作者单位： | 1.State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;2.College of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;3.Beijing Academy of Quantum Information Sciences, Beijing 100193, China |
| 基金项目： | Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 61790581) and the Key Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0303020001). |
| 摘 要： | |
| 收稿时间： | 2020-11-18 |
| 点击此处可从《中国物理 B》浏览原始摘要信息 | |
| 点击此处可从《中国物理 B》下载免费的PDF全文 | |