Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb2SiTe4 |
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Affiliation: | 1.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;2.University of Chinese Academy of Sciences, Beijing 100049, China;3.Songshan Lake Materials Laboratory, Dongguan 523808, China;4.School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;5.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China |
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Abstract: | Two-dimensional (2D) van der Waals material is a focus of research for its widespread application in optoelectronics, memories, and spintronics. The ternary compound Nb2SiTe4 is a van der Waals semiconductor with excellent air stability and small cleavage energy, which is suitable for preparing a few layers counterpart to explore novel properties. Here, properties of bulk Nb2SiTe4 with large in-plane electrical anisotropy are demonstrated. It is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 meV. The carrier mobility measured at 100 K is about 213 cm2·V-1·s-1 in bulk Nb2SiTe4, higher than the reported results. In a thin flake Nb2SiTe4, the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K, indicating that there exists a large anisotropic transport behavior in their basal plane. These novel transport properties provide accurate information for modulating or utilizing Nb2SiTe4 for electronic device applications. |
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Keywords: | carrier mobility anisotropic transport Raman spectroscopy |
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