Two-dimensional diffusion and cathodoluminescence of excitons generated by an electron beam in a semiconductor material: Results of mathematical modeling |
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| Authors: | A. N. Polyakov M. Noltemeyer T. Hempel J. Christen M. A. Stepovich |
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| Affiliation: | 1. Tsiolkovskii Kaluga State University, Kaluga, Russia
2. Otto-von-Guericke-Universit@at-Magdeburg, Magdeburg, Germany
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| Abstract: | Mathematical models of the two-dimensional diffusion and cathodoluminescence of excitons excited by an electron beam in a semiconductor material have been studied and are described. It is shown that the obtained models can be used to estimate the coefficients of exciton diffusion and mobility by means of the results of experimental measurements of the cathodoluminescence decay. Parameters typical of gallium nitride were used in the modeling. |
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