| (La、Nb)共掺杂TiO2压敏陶瓷第二相形成机理 |
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| 引用本文： | 严继康,甘国友,杜景红,易健宏.(La、Nb)共掺杂TiO2压敏陶瓷第二相形成机理[J].压电与声光,2011,33(5). |
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| 作者姓名： | 严继康 甘国友 杜景红 易健宏 |
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| 作者单位： | 昆明理工大学材料学院,云南昆明650093;稀贵及有色金属先进材料教育部重点实验室,云南昆明650093;云南省新材料制备与加工重点实验室,云南昆明650093 |
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| 基金项目： | 云南省自然科学基金资助项目(2008ZC014M); 昆明理工大学科研基金资助项目(2010-08);昆明理工大学分析测试基金资助项目(2009-013,2009-016,2009-030,2009-031) |
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| 摘 要： | 研究了(La、Nb)共掺杂TiO2压敏陶瓷第二相的形成机理.以锐钛矿TiO2、Nb2Os和La2 O3氧化物粉体为原料,采用传统固相烧结工艺制备了( La、Nb)共掺杂TiO2压敏陶瓷,采用SEM、EDS、XRD、AFM和TEM检测了(La、Nb)共掺杂TiO2压敏陶瓷样品的显微结构、化学组成、物相组成、热蚀沟和显微形貌；通过点缺陷热力学分析、晶界能和材料结构检测分析讨论了(La、Nb)共掺杂TiO2压敏陶瓷第二相的形成机理.研究结果表明,第二相的形成起源于掺杂La3+和Nb5+在晶界的偏析,偏析驱动力为弹性应变能.偏析离子在高能量晶粒表面或晶界面成核,并逐渐长大形成第二相.第二相主要在能量较高的晶面上生长,这有利于使整个材料体系的能量最低.
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| 关 键 词： | TiO2 陶瓷材料 压敏电阻 偏析 |
Formation Mechanism of Secondary Phase in (La, Nb) Co-doped TiO2 Ceramics Varistors |
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| YAN Jikang,GAN Guoyou,DU Jinghong,YI Jianhong.Formation Mechanism of Secondary Phase in (La, Nb) Co-doped TiO2 Ceramics Varistors[J].Piezoelectrics & Acoustooptics,2011,33(5). |
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| Authors: | YAN Jikang GAN Guoyou DU Jinghong YI Jianhong |
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| Institution: | YAN Jikang1,2,3,GAN Guoyou1,DU Jinghong1,YI Jianhong1,3 (1.Faculty of Materials Science and Engineering,Kunming University of Scienceand Technology,Kunming 650093,China,2.Key Lab.of Advance Materials in Rare & Precious and Nonferrous Metals,Ministry of Education,3.Key Lab.of Advance Materials of Yunnan Province,China) |
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| Abstract: | Formation mechanism of secondary phase in(La,Nb) co-doped TiO2 ceramics varistor were investigated.The(La,Nb) co-doped TiO2 ceramics samples were prepared from anatase TiO2,Nb2O5 and La2O3 oxide powders by a traditional solid-state sintering method.Microstructure,chemistry composition,crystal structure,thermal etched groove and micrograph of in(La,Nb) co-doped TiO2 ceramics were tested by SEM,EDS,XRD,AFM and TEM.Formation mechanism of secondary phase was discussed by point defect thermo-dynamical analysis,g... |
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| Keywords: | TiO2 ceramic materials varistors segregation |
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