Generation of ultrafast pulse via combined effects of stimulated Raman scattering and non-degenerate two-photon absorption in silicon nanophotonic chip

A project of ultrafast pulse generation has been presented and demonstrated by utilizing the combined nonlinear effects of stimulated Raman scattering (SRS) and non-degenerate two-photon absorption (TPA) based on silicon nanophotonic chip, in which a continuous wave (CW) and an ultrafast dark pulse are co-propagating in the silicon chip so that the CW will be modulated inversely by the dark pulse during the propagation. As a result, an ultrafast bright pulse is achieved using the technique. Simulation results show that an ultrafast pulse with a pulsewidth (full-width at half-maximum (FWHM)) of about 50 fs is generated at the end of a 5-mm long silicon chip, when the initial conditions, including an input maximum of 0.5 W and FWHM of ∼176 fs for dark pulse, and CW with power of 5 W, are chosen.