Extracting dark current components and characteristics parameters for InGaAs/InP avalanche photodiodes |
| |
| Affiliation: | 1. National Research Council Canada - Information and Communications Technologies, Canadian Photonics Fabrication Centre, Ottawa, Ontario K1A 0R6, Canada;2. National Research Council Canada - Information and Communications Technologies, Electronics, Ottawa, Ontario K1A 0R6, Canada;1. Hubei Key Laboratory of Intelligent Wireless Communications, Hubei Engineering Research Center for Intelligent Internet of Things, College of Electronics and Information Engineering, South-Central University for Nationalities, Wuhan 430074, China;2. State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;3. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;1. Solid State Physics Department, Applied Physics Division, Soreq NRC, Yavne 81800, Israel;2. Applied Physics Department, Hebrew University, Jerusalem, Israel;3. SCD-SemiConductor Devices, P.O. Box 2250, Haifa 31021, Israel |
| |
| Abstract: | The dark current of separate absorption grading charge multiplication (SAGCM) InGaAs/InP avalanche photodiodes has been numerical analyzed. SRH current, TAT current, BBT current and avalanche amplification combined together as the dark current have been extracted by simulation separately. The trend of punch-through voltage and breakdown voltage have been discussed, meanwhile the influence of structure parameters also has been investigated. |
| |
| Keywords: | InGaAs/InP Numerical simulation Dark current Avalanche photodiodes |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
