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Crystal growth,luminescence and scintillation properties of Eu2+:CeBr3 crystals
Institution:1. State Key Laboratory Base of Novel Function Materials and Preparation Science, School of Material Sciences and Chemical Engineering, Ningbo University, Ningbo, Zhejiang 315211, China;2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China;3. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;4. Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo, Zhejiang 315211, China;1. Scintillation Materials Research Center,Science and Engineering Building, University of Tennessee,1414 Circle Drive, 301 Knoxville 37916, TN, USA;2. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA;3. Department of Nuclear Engineering, University of Tennessee, Knoxville, TN, USA;4. Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA;1. Tohoku University, New Industry Creation Hatchery Center, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan;2. C&A Corporation, T-Biz, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan;3. Tohoku University, Institute for Material Research, 2-1-1 Katahira Aoba-ku, Sendai, Miyagi 980-8577, Japan;4. General Physics Institute, Russian Academy of Sciences, 38 Vavilov Str., 119991 Moscow, Russia;5. Nagoya University, Graduate School of Medicine, Department of Radiological and Medical Laboratory Sciences, 1-1-20, Daikominami, Higashi-ku, Nagoya, Japan;6. Korea University, 145 Anam-ro, Seongbuk-gu 136-701, Korea;7. Institute of Physics AS CR, Cukrovarnicka 10, 16253 Prague, Czech Republic;1. Amir Kabir University of Technology, Tehran, Iran;2. Shahid Beheshti University, Tehran, Iran;1. Delft University of Technology, Faculty of Applied Sciences, Department of Radiation Science and Technology, Section Luminescence Materials, Mekelweg 15, 2629 JB, Delft, Netherlands;2. Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012, Bern, Switzerland;1. Scintillation Materials Research Center, University of Tennessee, Knoxville, TN, USA;2. Bredesen Center, University of Tennessee, Knoxville, TN, USA;3. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA;4. Department of Nuclear Engineering, University of Tennessee, Knoxville, TN, USA;5. Agile Technologies, Knoxville, TN, USA
Abstract:Eu2+:CeBr3 crystals were grown by vertical Bridgman growth method and slight aliovalent doping of Eu2+ in the CeBr3 crystal did not change the crystal structure. The X-ray stimulated luminescence, photoluminescence, decay kinetics and scintillation properties were investigated at room temperature. The X-ray stimulated luminescence spectra exhibited wide broad emission bands from 3.54 eV to 2.95 eV in the Eu2+:CeBr3 crystal with high content of 620 ppm of Eu2+, which were the overlap of the emission bands ascribed to 5d → 4f transition of Ce3+ and 4f65 d1 → 4f7 transition of Eu2+, respectively. When the content of Eu2+ was decreased to 70 ppm, another emission band centered at 2.29 eV was observed. The photoluminescence spectra showed the energy transfer from Ce3+ to Eu2+. This decreased the Ce3+ emission intensity but enhanced the Eu2+ emission intensity. The photoluminescence decay time of Ce3+ emission decreased from 14 ns to 10 ns when the content of Eu2+ increased from 70 ppm to 620 ppm. The decay time of the emission of 525 nm did not change with the excitation wavelength and Eu2+ content, which could be assigned to the excitons that were bound on Eu2+ related centers. The light output of the Eu:CeBr3 crystal under the excitation of 241Am radioactive source was less than 20.2% of Tl:NaI crystal.
Keywords:Crystal growth  Scintillation crystal  Energy transfer  Vertical Bridgman method
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