Terahertz generation from electron- and neutron-irradiated semiconductor crystal surfaces |
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| Institution: | 1. Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Russia;2. Nanolectronics and Nanophotonics Laboratory, Tomsk State University, Tomsk 634050, Russia;3. General Physics Department, Kemerovo State University, Kemerovo 650043, Russia;4. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia;5. Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090, Russia;1. Unité de Recherche en Modélisation en Sciences Fondamentales et Didactiques, Université de Tunis El Manar, Campus Universitaire Farhat-Hached Tunis, B.P. no 94, Rommana 1068, Tunisia;2. Université Paris Diderot, Sorbonne Paris Cité, ITODYS, UMR 7086 CNRS, 15 Rue J.-A. de Baïf, 75205 Paris Cedex 13, France;3. Faculté de Technologie, Département de Pétrochimie et Génie des Procédés, Université 20 Août 1955 Skikda, Algeria;1. Thermal Systems Group, ISRO Satellite Centre, Bangalore 560017, India;2. Department of Nanotechnology, Center for Post Graduate Studies, Visvesvaraya Institute of Advance Technology, Visvesvaraya Technological University, Bengaluru Region, Muddenahalli, Chikkaballapur District 562101, India;1. Department of Physics, Tarbiat Modares University, Tehran, Iran;2. Department of Atomic & Molecular Physics, Faculty of Physics, Tabriz University, Tabriz, Iran;3. Department of physics, Tarbiat Modares university, Tehran, Iran;1. National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China;2. Northeast Forestry University, Harbin 150040, China;1. Department of 404, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China;2. International Institute for Earth System Science, Nanjing University, Nanjing, Jiangsu 210093, China |
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| Abstract: | Terahertz generation from the InP, InSb, GaAs and GaSe crystal surfaces excitated by femtosecond laser pulses has been studied. The terahertz spectra emitted from the native crystals and the crystals previously irradiated by high-energy neutrons or electrons have been recorded. Also, a simulation of the terahertz emission process has been performed. A weak terahertz signal generated from the GaSe native surface has been registered. In the case of electron-irradiated GaSe, the signal is increased several fold because of increased laser radiation absorption. |
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| Keywords: | Terahertz generation Semiconductor surface Neutron irradiation Electron irradiation GaSe |
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