Roles of blocking layer and anode bias in processes of impurity-band transition and transport for GaAs-based blocked-impurity-band detectors |
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| Institution: | 1. No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai, China;2. Laboratory of Advanced Material, Fudan University, 200438 Shanghai, China;1. National Research Tomsk State University, 36 Lenin av., 634050 Tomsk, Russia;2. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, 13, akademika Lavrent’eva av., 630090 Novosibirsk, Russia;1. Institute of Applied Physics RAS, Nizhny Novgorod, Russia;2. Peter the Great St. Petersburg, Polytechnic University, Saint-Petersburg, Russia;3. Nizhny Novgorod State University, Nizhny Novgorod, Russia;1. University of Science & Technology (UST), Republic of Korea;2. Korea Research Institute of Standards and Science (KRISS), Republic of Korea;1. Scientific Research Company “Electron-Carat”, Lviv 79031, Ukraine;2. National Research Tomsk State University, Tomsk 634050, Russia;3. ITMO University, St.-Petersburg 197101, Russia;4. Institute of Metallurgy and Materials Science PAN, Krakow 30-059, Poland;5. A V Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk 630090, Russia;6. P Sahaidachny National Army Academy, Lviv 79012, Ukraine;7. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics NASU, Lviv 79060, Ukraine |
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| Abstract: | Recently, GaAs-based BIB detector has attracted a lot of attention in the area of THz photovoltaic detection due to potential application values in security check and drug inspection. However, the physical mechanisms involving in carrier transition and transport are still unclear due to the poor material quality and immature processing technique. In this paper, the dark current and THz response characteristics have thus been numerically studied for GaAs-based blocked-impurity-band (BIB) detectors. The key parameters and physical models are constructed by simultaneously considering carrier freeze-out and impurity-band broadening effects. Roles of blocking layer and anode bias in processes of impurity-band transition and transport are intensively investigated, and the results can be well explained by numerical models. It is demonstrated that the effective electric field for the detector is only located in the absorbing layer, and can determine to a large extent the magnitude of the dark current and THz response. While the blocking layer not only can suppress dark current but also can attenuate responsivity due to its electric-field modulation effect. |
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| Keywords: | Blocked-impurity-band (BIB) Blocking layer Absorbing layer Anode bias Dark current Responsivity Electric field |
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