Changes in trap parameters in various mixed oxide garnets |
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| Affiliation: | 1. Peter the Great Saint-Petersburg Рolytechnic University, Polytekhnicheskaya 29, 195251, St. Petersburg, Russia;2. Philips Research Eindhoven, High Tech Campus 34, 5656 AE, Eindhoven, The Netherlands;1. Department of Obstetrics and Gynecology, Third Affiliated Hospital of Guangzhou Medical University, Guangzhou Medical Centre for Critical Pregnant Women, Key Laboratory for Major Obstetric Diseases of Guangdong Province, Guangzhou, China;2. OMNI Research Group, Department of Obstetrics and Gynecology, University of Ottawa Faculty of Medicine, Ottawa, Canada;3. Public Health Agency of Canada, Ottawa, Canada;4. Ottawa Hospital Research Institute Clinical Epidemiology Program, Ottawa, Canada;5. School of Epidemiology, Public Health, and Preventive Medicine, University of Ottawa Faculty of Medicine, Ottawa, Canada;1. Institute of Physics, Kazan Federal University, Kremlevskaja Street 18, Kazan 420008, Russia;2. Institute of Physics and Chemistry, National Research Mordovia State University, Bol''shevitskaya Street 68, Saransk 430005, Russia;1. School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, PR China;2. Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, PR China;3. SUSTech Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen 518055, PR China |
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| Abstract: | Shallow and deep electronic traps in various mixed oxide garnet ceramics (Y,Lu,Gd)3(Al,Ga)5O12 have been studied by thermally stimulated luminescence spectroscopy in the 80–550 K temperature range. It is shown that the substitution of Al ions by Ga and Y by Gd or Lu in YAG:Ce affects the properties of the traps. It is established that the studied ceramics contain residual impurities of chromium and ytterbium. On the base of the obtained and literature data, a table of the Cr-related trap position relative to the bottom of the conduction band in RE3(Gax,Al5-x)5O12:Ce garnets (RE = Lu, Y, Gd and combinations thereof) has been constructed. |
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| Keywords: | Scintillator Garnet Thermally stimulated luminescence Defect Cr impurity |
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