Low reflectance sputtered vanadium oxide thin films on silicon |
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| Institution: | 1. Thermal Systems Group, ISRO Satellite Centre, Bangalore 560017, India;2. Department of Nanotechnology, Center for Post Graduate Studies, Visvesvaraya Institute of Advance Technology, Visvesvaraya Technological University, Bengaluru Region, Muddenahalli, Chikkaballapur District 562101, India;1. Molecular Photoscience Research Center, Kobe University, Kobe 657-8501, Japan;2. Graduate School of Science, Kobe University, 1-1 Rokkodai-cho, Nada, Kobe 657-8501, Japan;3. Leibniz Institute for Solid State and Materials Research Dresden, IFW, D-01171 Dresden, Germany;4. Department of Physics, The Ohio State University, Columbus, OH 43210, USA;5. Institut fur Festkörperphysik, Technische Universität Dresden, D-01062 Dresden, Germany;1. Department of 404, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China;2. International Institute for Earth System Science, Nanjing University, Nanjing, Jiangsu 210093, China;1. Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science-Physics of Devices, High Tech Campus 21, 5656 AE Eindhoven, The Netherlands;2. National Centre for HREM, Kavli Institute of Nanoscience, Lorentzweg 1, 2628 CJ Delft, The Netherlands;3. Philips Innovation Labs, Material Analysis, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands;4. Eindhoven University of Technology (TU/e), Department of Applied Physics, Plasma & Materials Processing, P.O. Box 513, 5600 MB Eindhoven, The Netherlands |
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| Abstract: | Vanadium oxide thin films on silicon (Si) substrate are grown by pulsed radio frequency (RF) magnetron sputtering technique at RF power in the range of 100–700 W at room temperature. Deposited thin films are characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques to investigate microstructural, phase, electronic structure and oxide state characteristics. The reflectance and transmittance spectra of the films and the Si substrate are recorded at the solar region (200–2300 nm) of the spectral window. Substantial reduction in reflectance and increase in transmittance is observed for the films grown beyond 200 W. Further, optical constants viz. absorption coefficient, refractive index and extinction coefficient of the deposited vanadium oxide films are evaluated. |
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| Keywords: | Vanadium oxide Thin films Reflectance Optical constants |
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