Direct patterning of gold oxide thin films by focused ion-beam irradiation |
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Authors: | F Machalett K Edinger J Melngailis M Diegel K Steenbeck E Steinbeiss |
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Institution: | Institut für Festk?rperphysik, Friedrich-Schiller-Universit?t Jena, Max-Wien-Platz 1, 07743 Jena, Germany, DE Institute for Plasma Research, University of Maryland, College Park, MD 20742, USA, US Institut für Physikalische Hochtechnologie e.V., Winzerlaer Strasse 10, 07745 Jena, Germany, DE
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Abstract: | For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar+ laser beam and a 30 keV Ga+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma.
The patterning of larger areas (dimension 10–100 μm) has been carried out with the laser beam by local heating of the selected
area above the decomposition temperature of AuOx (130–150 °C). For smaller dimensions (100 nm to 10 μm) the FIB irradiation could be used. With both complementary methods
a reduction of the sheet resistance by 6–7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB
irradiation from 1.5×107 Ω/□ to approximately 6 Ω/□). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the
irradiated areas, and scanning electron microscopy (SEM), as well as atomic force microscopy (AFM) investigations, indicate
that the FIB patterning in the low-dose region (1014 Ga+/cm2) is combined with a volume reduction, which is caused by oxygen escape rather than by sputtering.
Received: 30 May 2000 / Accepted: 31 May 2000 / Published online: 13 July 2000 |
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Keywords: | PACS: 52 50 Jm 61 80 Jh 85 40 Ls |
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