| NONDESTRUCTIVE BAND—GAP PROFILE DETERMINATION OF HgCdTe LPE CROWN LAYERS |
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| 引用本文： | Z.F.Ivasiv F.F.Sizov 等.NONDESTRUCTIVE BAND—GAP PROFILE DETERMINATION OF HgCdTe LPE CROWN LAYERS[J].红外与毫米波学报,2002,21(2):81-86. |
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| 作者姓名： | Z.F.Ivasiv F.F.Sizov |
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| 作者单位： | Institute of Semiconductor Physics，Kiev，Kiev 03028，Ukraine |
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| 摘 要： | ＩｎｔｒｏｄｕｃｔｉｏｎＭｏｓｔｏｆｍｏｄｅｒｎＨｇ1-ｘＣｄｘＴｅｔｅｒｎａｒｙｃｏｍｐｏｕｎｄＩＲｐｈｏｔｏｄｅｔｅｃｔｏｒｓａｒｅｍａｎｕｆａｃｔｕｒｅｄｆｒｏｍＬＰＥｆｉｌｍｓｇｒｏｗｎｏｎＣｄＴｅａｎｄＣｄＺｎＴｅｓｕｂｓｔｒａｔｅｓ1～ 4 ] .Ｃｏｍｐｏ ｓｉｔｉｏｎａｌｄｅｐｔｈｎｏｎｕｎｉｆｏｒｍｉｔｙｓｅｅｍｓｔｏｂｅａｎｉｎｈｅｒｅｎｔｆｅａｔｕｒｅｏｆｔｈｅｓｅｆｉｌｍｓ5,6 ] .Ｉｔｃａｕｓｅｓｔｈｅｖａｒｉａｔｉｏｎｓｏｆｂａｎｄ ｇａｐｗｉｔｈｔｈｅｄｅｐｔｈ ,ｔｈｕｓａｆｆ…
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| 关 键 词： | HgCdTe 汞镉碲化合物 外延生长 红外探测 LPE 液相外延 |
| 收稿时间： | 2001/1/8 |
| 修稿时间： | 2001年1月8日 |
NONDESTRUCTIVE BAND-GAP PROFILE DETERMINATION OF HgCdTe LPE GROWN LAYERS |
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| Z.F.Ivasiv,F.F.Sizov,V.V.Tetyorkin,E.V.Andreeva.NONDESTRUCTIVE BAND-GAP PROFILE DETERMINATION OF HgCdTe LPE GROWN LAYERS[J].Journal of Infrared and Millimeter Waves,2002,21(2):81-86. |
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| Authors: | ZFIvasiv FFSizov VVTetyorkin EVAndreeva |
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| Abstract: | Infrared transmission and photoconductivity spectra of mercury-cadmium telluride (MCT) epitaxial layers,grown by liquid phase epitaxy (LPE) on CdTe and CdZnTe wide band-gap substrates,were investigated both theoretically and experimentally at temperatures T=82 K and T=300 K in the infrared (IR) wavelength region 3-15 μm.The photoresponse position of the diodes was determined at cryogenic temperatures from the transmission spectra of room temperature.Theoretical calculations of optical density D(h-ω),needed for analysis of experimental optical transmission data,were performed in the framework of WKB approximation. |
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| Keywords: | mercury cadmium telluride graded band gap epitaxial layers |
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