| 由脉冲M O S 结构的I一C 瞬态确定体产生寿命和表面产生速度 |
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| 引用本文： | 张秀森
,陈汉杰,高军杰,欧海疆.由脉冲M O S 结构的I一C 瞬态确定体产生寿命和表面产生速度[J].浙江大学学报(理学版),1985,12(3):330-336. |
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| 作者姓名： | 张秀森 陈汉杰 高军杰 欧海疆 |
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| 作者单位： | 杭州大学，杭州大学，杭州大学 八○级学生，八○级学生，八○级学生 |
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| 摘 要： | 本文建议利用MOS结构对阶跃电压的I-t和C-t响应,采用由Rabbani提出的较精确的体产生区模型测量体产生寿命和表面产生速度,既不需要在瞬态曲线上求斜率,也不需要知道样品衬底的掺杂浓度.因此不仅可使计算简单,而且还可以减少误差.本方法原则上适用于确定掺杂不均匀样品的两个产生参数.
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| 关 键 词： | 半导体 MOS结构 |
Determination of Generation Lifetime and Surface Generation Velocity from I-C Measurement of Pulsed MOS Structure |
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| Zhang Xiumiao,Chen Hanjie,Cao Junjie,Ou Haijiang.Determination of Generation Lifetime and Surface Generation Velocity from I-C Measurement of Pulsed MOS Structure[J].Journal of Zhejiang University(Sciences Edition),1985,12(3):330-336. |
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| Authors: | Zhang Xiumiao Chen Hanjie Cao Junjie Ou Haijiang |
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| Institution: | Zhang Xiumiao Chen Hanjie Cao Junjie Ou Haijiang |
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| Abstract: | Based on Rabbani's mcdel, here is reported the method of using I-C transient response curve to a step voltage for a MOS capacitor to determine the bulk generation lifetime and the surface generation velocity. Neither the slope of the transient curve nor the doping concentration of substrate is required; therefore, the calculation is much simpler and the error of measurement can be reduced. This method is also suitable for measuring those samples with nonuniform doping concentration. |
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| Keywords: | Semiconductor MOS structure |
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