Bulk and near-surface annealing behavior of the 0.8 eV luminescence in semi-insulating gallium arsenide |
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Authors: | N. M. Haegel Y. J. Kao |
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Affiliation: | (1) Department of Materials Science and Engineering, University of California, 90024 Los Angeles, CA, USA |
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Abstract: | An annealing study of the 0.8 eV photoluminescence band in LEC GaAs has been performed, using a combination of 10 min annealing steps over a temperature range of 800–1100° C and one hour furnace annealing steps at 500–700° C. Results show that the defect responsible for the luminescence is stable in bulk material under all annealing conditions that have been investigated. In combination with earlier results, this demonstrates a stability of the defect to temperatures in excess of 900° C and indicates a parallel with the annealing behavior of the 0.67 eV band in semi-insulating GaAs. The observed annealing behavior is very different in the near-surface region, indicating an important role of As out-diffusion. |
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Keywords: | 78.60Dg 71.55Fr |
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