单晶硅中硅氢键和氢致缺陷的电子自旋共振研究

本文先后用光致发光、核磁共振和电子自旋共振研究了单晶硅中硅氢键和氢致缺陷的性质。光致发光谱表明硅氢键引起了大量非辐射中心。观测和探讨了电子自旋共振测量与样品平均厚度的关系。本文克服了真空热处理中氢从表面扩散的困难,并避免了样品平均厚度大于1.00mm和小于0.85mm给电子自旋共振带来的困难,测得分别在纯氢气氛和氩气氛生长的单晶硅每立方厘米电子自旋数。对比二者,我们估算出氢的数量为4×10¹⁶/cm³,而硅氢键分离激活能约为0.1eV。前者与文献6]和10]符合得很好,后者比文献11]测定的沉淀激活能低一个数量级。 关键词：

ELECTRON SPIN RESONANCE INVESTIGATION ON Si-H BONDS AND H-INDUCED DEFECTS IN SINGLE CRYSTALS OF SILICON

The properties of Si-H bonds and H-induced defects in single crystal silicon were investigated by means of photoluminescence, nuclear magnetic resonance and electron spin resonance. The results of photoluminescence indicate that the Si-H bonds induced a lot of non-radiative centers. The relation of average thickness of samples to electron spin resonance measurement was observed and discussed.Our work overcomes the difficulties in association with diffusion of H through the surface during annealing in vacuum and with ESR measurement when the thickness of the samples was over 1.00 mm or less than 0.85 mm. in comparing the ESR results for single crystal silicon grown in hydrogen and that in argon atmosphere, we got the amount of hydrogen to be 4×l0¹⁶cm^-3 and the activation energy to be about 0.1 eV. The former agrees quite accurately with references 6] , 10] . The later is one order lower than the activation energy of precipitation reported in reference 11] .