Dynamic range optimization in SIMS analyses of arsenic and antimony dopants in silicon

Summary The application of two sample preparation techniques leads to a better understanding of the profile tailing in SIMS analyses of As and Sb distributions measured with Cs primary ions. The dynamic range in the SIMS depth profiles in terms of the detected concentration range is improved nearly by three orders of magnitude on samples with extremely high surface concentrations compared to measurements without preparation. More than five orders of magnitude are obtained. The application of the preparation techniques to As ion implants in silicon reveals a channeling tail below a concentration level of 5·10¹⁶ at/cm³ which is nearly independent of the implanted ion dose if it exceeds 5·10¹² at/cm².