Electronic behaviour of thin-film CdTe solar cells |
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| Authors: | M Burgelman P Nollet S Degrave |
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| Institution: | (1) Universiteit Gent, Electronics and Information Systems (ELIS), Pietersnieuwstraat 41, B-9000 Gent, Belgium (Fax: +32-9/264-3594, E-mail: Burgelman@elis.rug.ac.be) , BE |
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| Abstract: | New support is given for one of the controversial models about the electronic consequences of the CdCl2 treatment of a thin-film CdTe solar cell: the assumption that deep acceptor states are introduced in the bulk of the CdTe
layer as a result of the CdCl2 treatment. A detailed study of the doping profile using capacitance–voltage (C-V) measurements is performed as a first step.
The above assumption is numerically simulated with our simulation programme SCAPS. In this way, anomalous features of the
C-V measurements are fully explained, and further correspondence between calculated and measurable quantities is found.
Received: 1 March 1999 / Accepted: 28 March 1999 / Published online: 1 July 1999 |
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| Keywords: | PACS: 73 50 Pz 73 61 Ga 78 66 Hf |
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