| 电容耦合互补型单电子晶体管逻辑单元的数值模拟 |
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| 引用本文： | 黄萍,蒋建飞,蔡琪玉,童明照.电容耦合互补型单电子晶体管逻辑单元的数值模拟[J].固体电子学研究与进展,2000,20(4). |
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| 作者姓名： | 黄萍 蒋建飞 蔡琪玉 童明照 |
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| 基金项目： | 中国科学院资助项目，上海市AM基金 |
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| 摘 要： | 根据单电子系统半经典模型 ,采用蒙特卡罗法单电子模拟程序对电容耦合的类 CMOS单电子逻辑单元在不同参数条件下的转移特性进行数值模拟。这种模拟器的物理内涵是通过建立n沟单电子晶体管 (SET)开关单元、p沟 SET开关单元以及互补型 SET开关单元的电容电压电荷方程 ,然后根据隧穿前后系统自由能的变化来确定系统的隧穿率 ,建立电流 -电压方程来决定开关特性而得到的。
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| 关 键 词： | 单电子晶体管 纳米隧道结 库仑阻塞 单电子隧道效应 |
Numerical Simulation of Complementary Capacitively Coupled SET Logic Cell |
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| Huang Ping,Jiang Jianfei,Cai Qiyu,Tong Mingzhao.Numerical Simulation of Complementary Capacitively Coupled SET Logic Cell[J].Research & Progress of Solid State Electronics,2000,20(4). |
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| Authors: | Huang Ping Jiang Jianfei Cai Qiyu Tong Mingzhao |
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| Abstract: | According to the semi classical model, the transfer characteristics of CMOS type single electron digital logic cells were analyzed by the Monte Carlo simulation. The charge voltage equatoins of the variant cells were found. The switch staff of these cells is determined by the change of electron free energy of the system. |
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| Keywords: | single electron transistor nanometer tunnel junction column blockade single tunneling effe |
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