Estimation of the deformation-potential constant for <Emphasis Type="Italic">p</Emphasis>-type isotropic polycrystalline silicon through the deformation potential of a <Emphasis Type="Italic">p</Emphasis>-type silicon single crystal

A method of calculating the effective deformation-potential constant E ₁ for holes and longitudinal acoustic phonons in isotropic polycrystalline silicon is suggested. The deformation-potential constant E ₁ is estimated through the deformation potentials a, b, and d of the silicon single crystal. The procedure of averaging of the squared modulus of the hole and acoustic phonon interaction Hamiltonian written in the plane wave basis over the polycrystal ensemble provides the basis for calculation of the constant E ₁ . It is demonstrated that for T = 200–600 K, hole concentration p = (5.0–10.0)∙10¹⁹ cm^–3, and crystallite size d = 300–3000 ?, the deformationpotential constant E ₁ is independent of the hole concentration p, temperature T, and crystallite size d.