Epitaxial Heusler alloy films on GaAs(0 0 1) substrates |
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| Authors: | J Herfort B Jenichen V Kaganer A Trampert H-P Schnherr KH Ploog |
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| Institution: | Paul-Drude-Institut für Festkörperelektronik Berlin, Hausvogteiplatz 5-7, 10117 Berlin, Germany |
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| Abstract: | We present results on fabrication, and structural and electrical properties of single-crystal  heterostructures grown by molecular beam epitaxy. The exact stoichiometry of the Heusler alloy films can be achieved for almost lattice matched films. As evidenced by high-resolution X-ray diffraction, transmission electron microscopy, and resistivity measurements, we find an optimum growth temperature of  , to obtain ferromagnetic layers with high crystal and interface perfection as well as high degree of atomic ordering. . |
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| Keywords: | Molecular beam epitaxy Ferromagnet/semiconductor hybrid structures Heusler alloys |
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