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Anomalous quantum Hall effect induced by nearby quantum dots
Authors:K Takehana  T Takamasu  G Kido  M Henini  L Eaves
Institution:aNanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, 305-0047 Japan;bSchool of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
Abstract:Transport measurements in high magnetic fields have been performed on two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear feature of quantum Hall effect was observed in spite of presence of QDs nearby 2DES. However, both magnetoresistance, ρxx, and Hall resistance, ρxy, are suppressed significantly only in the magnetic field range of filling factor in 2DES ν<1 and voltage applied on a front gate View the MathML source . The results indicate that the electron state in QDs induces spin-flip process in 2DES.
Keywords:Quantum dots  Quantum Hall effect
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