| Ag/Bi4Ti3O12栅铁电场效应管ID-VG特性双曲模型 |
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| 引用本文： | 王华,任鸣放. Ag/Bi4Ti3O12栅铁电场效应管ID-VG特性双曲模型[J]. 固体电子学研究与进展, 2005, 25(4): 445-449 |
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| 作者姓名： | 王华 任鸣放 |
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| 作者单位： | 桂林电子工业学院信息材料科学与工程系,广西,桂林,541004;桂林电子工业学院信息材料科学与工程系,广西,桂林,541004 |
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| 基金项目： | 广西自然科学基金（0236062）项目 |
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| 摘 要： | 在理论分析的基础上,结合铁电材料特性及实验数据,提出了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管转换(ID-VG)特性的双曲模型并进行了数值模拟。该模型不但与阈值电压、沟道饱和电流等器件参数相关而且充分反映了剩余极化、矫顽电压等铁电栅介质极化特性对器件ID-VG特性的影响。结果表明:模拟曲线与实验曲线基本一致,能较好地模拟和描述铁电场效应晶体管的ID-VG特性。
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| 关 键 词： | 铁电场效应晶体管 ID-VG特性 数学模型 数值模拟 |
| 文章编号： | 1000-3819（2005）04-445-05 |
| 收稿时间： | 2004-12-17 |
| 修稿时间： | 2005-03-07 |
Hyperbola Model of ID-VG Characteristics of Ferroelectric Field-effect-transistors with Ag/Bi4Ti3O12 Gate |
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| WANG Hua,REN Minfang. Hyperbola Model of ID-VG Characteristics of Ferroelectric Field-effect-transistors with Ag/Bi4Ti3O12 Gate[J]. Research & Progress of Solid State Electronics, 2005, 25(4): 445-449 |
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| Authors: | WANG Hua REN Minfang |
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| Affiliation: | Department of Information Material Science and Engineering ,Guilin University of Electronic Technology, Guangxi ,Guilin , 541004,CHN |
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| Abstract: | A hyperbola model of I _D- V _Gcharacteristics of ferroelectric field-effect-transistors(FFETs) with Ag/Bi_4Ti_3O_ 12gate was brought forward,which is based on the theory of MOS device and the experimental data of the FFET.The model comprises the main parameters such as threshold voltage and the ferroelectric polarization properties.The simulated I _D- V _G curves were consistent with the curves obtained by measurement,which indicated that the model could characterize the I _D- V _G properties of the ferroelectric field-effect-transistors properly. |
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| Keywords: | FFET ID-VG characteristics model simulation |
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